A new acceptor level in indium-doped silicon

Abstract

A new acceptor level located 0.111±0.002 eV from the valence band with a peak photoionization cross section of (1.4±0.6) ×10−16 cm2 has been observed in indium-doped silicon. Its presence is revealed both by the low-temperature slope of Hall measurements versus temperature and by the spectral response of the photoconductivity. The concentration of this 0.111-eV level is strongly correlated with the concentration of indium, suggesting that an In complex is responsible for this center.