Publication | Closed Access
Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires
139
Citations
21
References
2002
Year
EngineeringNanosystemsSilicon CarbideNanostructured MaterialsSilicon On InsulatorChemical EngineeringCarbon-based MaterialSilicon Nitride NanowiresMaterials FabricationNanostructure Synthesisβ-Sic NanowiresSilicon OxynitrideMaterials ScienceNanotechnologyCarbon MaterialsPowder SynthesisSic NanowiresNanomaterialsApplied PhysicsCeramic SynthesisSi2n2o NanowiresCarbideNanostructures
SiC nanowires have been synthesized by various methods. Synthesis is achieved by heating silica gel or fumed silica with activated carbon in a reducing atmosphere (1100–1360 °C), optionally with catalytic iron particles, or by heating carbon nanotubes with silica gel in NH₃, yielding β‑SiC, α‑Si₃N₄, or Si₂N₂O nanowires.
Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain β-SiC nanowires involves heating silica gel with activated carbon at 1360 °C in H2 or NH3. The same reaction, if carried out in the presence of catalytic iron particles, at 1200 °C gives α-Si3N4 nanowires and Si2N2O nanowires at 1100 °C. Another method to obtain Si3N4 nanowires is to heat multi-walled carbon nanotubes with silica gel at 1360 °C in an atmosphere of NH3. In the presence of catalytic Fe particles, this method yields α-Si3N4 nanowires in pure form.
| Year | Citations | |
|---|---|---|
Page 1
Page 1