Publication | Closed Access
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
32
Citations
6
References
2008
Year
Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringDislocation InteractionPhysicsHigh Temperature AnnealApplied PhysicsSide EffectsSemiconductor Device FabricationElectronic PackagingSilicon On InsulatorMicroelectronicsMolecular Beam EpitaxyDislocation Defects
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