GaAs on Si(111) with a layered structure GaSe buffer layer - Concepedia

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GaAs on Si(111) with a layered structure GaSe buffer layer

14

Citations

9

References

1995

Year

J. E. Palmer, T. Saitoh, Tokuo Yodo, M. Tamura

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsSemiconductor MaterialCompound SemiconductorSemiconductor Device

References

	Year	Citations

Page 1