J. E. Palmer

Growth and characterization of GaSe and GaAs/GaSe on As-passivated Si(111) substrates

J. E. Palmer, T. Saitoh, Tokuo Yodo et al. · Journal of Applied Physics · 1993 · 43 citations

Engineering, Layered Structure Gase, Silicon On Insulator +17

Graphoepitaxy of Ge on SiO2 by solid-state surface-energy-driven grain growth

T. Yonehara, Henry I. Smith, Carl V. Thompson et al. · Applied Physics Letters · 1984 · 40 citations

Materials Engineering, Materials Science, Epitaxial Growth +15

Effect of As4 overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

J. E. Palmer, Geoffrey F. Burns, Clifton G. Fonstad et al. · Applied Physics Letters · 1989 · 36 citations

Engineering, Silicon On Insulator, Semiconductors +16

Growth and Characterization of GaAs/GaSe/Si Heterostructures

J. E. Palmer, Tohru Saitoh, Tokuo Yodo et al. · Japanese Journal of Applied Physics · 1993 · 31 citations

Semiconductors, Gase Film, Gaas Growth +13

Growth of GaSe on As-passivated Si(111) substrates

J. E. Palmer, T. Saitoh, Tokuo Yodo et al. · Journal of Crystal Growth · 1995 · 19 citations

Engineering, Surface Science, Applied Physics +4