J. E. Palmer - Concepedia

Author

J. E. Palmer

Massachusetts Institute of Technology

Also Known As

J. E. Palmer, J. Palmer, J.E. Palmer, Joyce E. Palmer, Joyce E. Palmer Joyce E. Palmer, Joyce PALMER, Joyce Palmer

Publications

221

Citations

H-Index

Concepts

All Affiliations

Massachusetts Institute of Technology

About

J. E. Palmer is an author at Massachusetts Institute of Technology specializing in engineering, applied physics, and thin films.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	193
2	Applied Physics	7	7	193
3	Electrical Engineering	3	3	93
4	Chemistry	1	1	19
5	Materials Engineering	1	1	40

J. E. Palmer

Publications

206

Citations

H-Index

Page 1

	Year	Citations
Growth and characterization of GaSe and GaAs/GaSe on As-passivated Si(111) substrates J. E. Palmer, T. Saitoh, Tokuo Yodo, Journal of Applied Physics EngineeringLayered Structure GaseSilicon On InsulatorSemiconductor DeviceSemiconductors	1993	43
Graphoepitaxy of Ge on SiO2 by solid-state surface-energy-driven grain growth T. Yonehara, Henry I. Smith, Carl V. Thompson, Applied Physics Letters Materials EngineeringMaterials ScienceEpitaxial GrowthOptical MaterialsEngineering	1984	40
Effect of As4 overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy J. E. Palmer, Geoffrey F. Burns, Clifton G. Fonstad, Applied Physics Letters EngineeringSilicon On InsulatorSemiconductorsGaas FilmsMolecular Beam Epitaxy	1989	36
Growth and Characterization of GaAs/GaSe/Si Heterostructures J. E. Palmer, Tohru Saitoh, Tokuo Yodo, Japanese Journal of Applied Physics SemiconductorsGase FilmGaas GrowthEngineeringEpitaxial Growth	1993	31
Growth of GaSe on As-passivated Si(111) substrates J. E. Palmer, T. Saitoh, Tokuo Yodo, Journal of Crystal Growth EngineeringSurface ScienceApplied PhysicsAs-passivated SiSemiconductor Device Fabrication	1995	19
GaAs on Si(111) with a layered structure GaSe buffer layer J. E. Palmer, T. Saitoh, Tokuo Yodo, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsSemiconductor MaterialCompound Semiconductor	1995	14
What type of information is trusted by whom? A multilevel analysis of the stability of the information source‐trust association for blood transfusion Eamonn Ferguson, Alexa Spence, Ellen Townsend, Transfusion	2009	13
Rearrangement of misfit dislocations in GaAs on Si by post-growth annealing M. Tamura, Tokuo Yodo, T. Saitoh, Journal of Crystal Growth EngineeringMisfit DislocationsPhysicsDislocation InteractionApplied Physics	1995	10

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