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Nonlinear optical mapping of silicon carbide polytypes in 6H-SiC epilayers
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1996
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Materials SciencePhotonicsNonlinear Optical MappingOptical MaterialsEngineeringOptical PropertiesApplied PhysicsSitu ControlDifferent OrientationsOptical CharacterizationOptoelectronicsCarbideSic Growth
A fast and noninvasive mapping tool based on spatially resolved optical second-harmonic generation is presented for the detection of silicon carbide polytypes in 6H-SiC epilayers. 3C-SiC microcrystallites of different orientations are identified from second-harmonic rotational anisotropy scans. The method reported can be used as an efficient in situ control of SiC growth processes.