Applied Physics Letters · 2006 · 33 citations · 10 references
EngineeringElectrical EngineeringMaterials EngineeringOptoelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportOxide SemiconductorsP-n JunctionsPhotodetectorsQuantum OptoelectronicsSolar CellsDiffusion LengthHeterojunction PhotodetectorsPhotoconductive GainPhotodiodesSemiconductor Heterojunctions
Forward bias electron injection into the p side of a p-n homojunction was shown to result in an improved response of the ZnO photodiodes. Injection of about 25C of charge yielded a nearly 2.5-fold increase of photocurrent at 350nm. This improvement was correlated with the increase of the diffusion length of minority electrons in p-type ZnO:Sb as determined by electron beam induced current measurements. It is suggested that the increase of the diffusion length is related to the carrier trapping on nonionized acceptor levels.
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