Japanese Journal of Applied Physics · 1996 · 19 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectrochemistryMicroelectronicsSemiconductor DevicesCarrier TransportComplementary Metal-oxide-semiconductor TechnologyMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesDepletion-mode TransistorsIndium PhosphideJunction Ideality FactorSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky Barrier Height EngineeringSchottky Barriers
Pt Schottky barrier diodes (SBDs) with a high Schottky barrier height of 0.86 eV and an ideality factor of near unity were successfully realized by a novel in situ electrochemical process. Applying this novel technique to InP metal semiconductor field effect transistors (MESFETs), good gate control of drain current with pinch-off, an effective channel mobility of 1,840 cm 2 V -1 s -1 and no drain current drift behavior were achieved. The InP MESFET operates even under a positive gate bias, showing feasibility of enhancement-mode operation as well as depletion-mode operation.