ArF-Excimer-Laser Annealing of 3C-SiC Films

Abstract

Boron-doped 3C-SiC films grown by thermal chemical vapor deposition (CVD) at 950°C using an infrared lamp were annealed using an ArF excimer laser (193 nm). The crystal quality was studied using reflection high-energy electron diffraction (RHEED), and the surface morphology was studied using a scanning electron microscope (SEM). It was demonstrated that both the crystal quality and the surface morphology were improved after irradiation of three laser pulses with an energy density of 1.4–1.6 J/cm 2 per pulse.