Be-implanted 1.3-μm InGaAsP avalanche photodetectors

Abstract

The effect of different annealing temperatures in the 450–800 °C range on the photoluminescence of Be-implanted InGaAsP has been studied. The results of these measurements indicate that the annealing temperature should be above 700 °C for optimum lattice recovery. Avalanche photodetectors with leakage currents as low as 1 μA at 100 V and with gains ≳100 at 116 V have been fabricated. The quantum efficiency for these devices is about 65% throughout the 1.00–1.30-μm wavelength range.