Applied Physics Letters · 1993 · 15 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIon ImplantationPhotovoltaic DevicesPhotovoltaic MaterialsSilicon MaterialsSolar Cell MaterialsSolar CellsElectrical PropertiesElectrical Properties AnalysisIon Implantation EffectsPhotovoltaic DegradationSilicon Solar CellsSolar Cell CharacterizationSolar Cell Device PhysicsSolar Cell Fabrication
The electrical properties of edge-defined, film-fed grown and Czochralski silicon solar cells ion implanted with titanium have been investigated using deep level transient spectroscopy. In both types of solar cell materials, the observed degradation in cell performance is associated with the Ti deep level reported in earlier studies. During the cell fabrication sequence, Ti in-diffuses into the bulk of the sample, creating a low-lifetime zone extending beneath the junction. Solar cell modeling, based on the extent of the titanium-diffused layer and the properties of the Ti center, is in excellent agreement with observed cell performance.
5