Journal of The Electrochemical Society · 1978 · 124 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsCrystal StructureTransport PhenomenaCrystal GrowthCrystallization ProcessesDiffusion In SolidsEpitaxial GrowthGrain GrowthSpatial SegregationCrystal Growth KineticsDiffusion Boundary LayerDiffusion In CrystalsDiffusion-controlled GrowthDopant SegregationLateral Dopant DiffusionSegregationSegregation Effects
Crystal growth and segregation in space were quantitatively investigated in a Bridgman‐type configuration. It was established that the segregation behavior is diffusion controlled without interference from residual gravity, G‐jitter, and surface tension gradients. Radial and longitudinal segregation effects were accounted for by a lateral diffusional dopant redistribution within the diffusion boundary layer brought about by the nonplanar morphology of the growth interface.