Applied Physics Letters · 1972 · 10 citations · 10 references
Natural SciencesMaterials SciencePhysicsSemiconductor MaterialsSpectroscopic AnalysisSpectroscopyHigh-frequency Semiconductor DevicesInfrared SpectroscopyOptical Properties Of SemiconductorsSemiconductor PhysicsEffective MassElectron ScatteringFar-infrared SpectroscopyImpurity ScatteringInfrared EmissionScattering ResonancesSemiconductor Infrared MaterialsTemperature Dependence Of Resonance Absorption
Cyclotron-resonance lines in n-type GaAs at 4.2°K are observed to be anomalously narrow when measured at λ = 220 μm. Analysis of the resonance line yields an effective mass ratio of 0.068m0 and an electron-impurity scattering time of 3.9×10−12 sec compared to a dc scattering time of 4×10−15 sec.
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Magnetic Freezeout and Impact Ionization in GaAs
T. O. Poehler · Physical review. B, Solid state · 1971 · 46 citations