Synthesis and Characterization of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Nanowires with Memory Switching Effect

Yeonwoong Jung, Seho Lee, Dong‐Kyun Ko, Ritesh Agarwal

Journal of the American Chemical Society · 2006 · 117 citations · 15 references

Concepts

Abstract

Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials

References

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