UV Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets

Abstract

High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were ~25 nm and 2.16 μm, respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 V/μm, and the field enhancement factor (β) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 V/μm and 6616, respectively.