Publication | Closed Access
Capture from free-carrier tails in the depletion region of junction barriers
43
Citations
5
References
1980
Year
Device ModelingElectrical EngineeringEngineeringPhysicsDepletion RegionNanoelectronicsBias Temperature InstabilityApplied PhysicsTransport PhenomenaEnergy LevelJunction ExperimentsJunction BarriersFree-carrier TailsCharge Carrier TransportMicroelectronicsCharge TransportDeep TrapSemiconductor Device
Junction experiments have been proposed in which measurements of depletion capacitance as a function of decreasing reverse bias are used to determine the energy level of a deep trap. Since deep levels in the depletion layer are filled from the free-carrier tail extending from the bulk, this process is slow to reach equilibrium. Calculation and experiment demonstrate this effect and it is emphasized that its neglect leads to serious misinterpretation.
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