Viable strained-layer laser at λ=1100 nm

Abstract

In0.45Ga0.55As/GaAs/AlGaAs quantum well lasers emitting at 1100 nm have been fabricated and evaluated. These devices, which employ a highly strained quantum well region, exhibit low- (250 A/cm2) threshold current density and excellent reliability both of which were hitherto unattainable at such high In mole fractions.