Effect of the deposition temperature on temperature coefficient of resistance in CuNi thin film resistors

Abstract

A constantan composition of Cu54Ni46 showing an near zero TCR value was obtained using a Ni power of 100W and a Cu power of 50W by dc magnetron cosputtering. The grain size increases and resistivity of the films decreases with increasing deposition temperature. The crystallinity of the films definitely influences the TCR value, which is an important parameter in resistor devices. The films deposited at 100°C exhibited a near zero TCR value of approximately 5ppm∕°C and the positive TCR values increased with increasing deposition temperature. The films deposited above 100°C do not exhibit irreversibility of the resistance with increasing deposition temperature.