Publication | Closed Access
Low-temperature scanning-tunneling-microscopy observations of the Si(001) surface with a low surface-defect density
118
Citations
12
References
1994
Year
EngineeringSilicon On InsulatorAsymmetric-dimer ModelTunneling MicroscopySurface DimersSurface ReconstructionMaterials ScienceLow Surface-defect DensityPhysicsDefect FormationSemiconductor Device FabricationMicroelectronicsSurface CharacterizationLow TemperaturesScanning Probe MicroscopySurface ScienceApplied PhysicsCondensed Matter PhysicsLow-temperature Scanning-tunneling-microscopy ObservationsSurface Analysis
We have settled a controversy that surface dimers in the Si(001) surface are intrinsically symmetric or asymmetric. Atom-resolved scanning-tunneling-microscopy (STM) images of a low-defect-density (\ensuremath{\sim}1%) surface at 144 K give definite evidence for the asymmetric-dimer model. We have identified a local influence of surface defects on buckling of dimers at low temperatures, which was not clarified in previous STM observations at 120 K.
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