Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices

Abstract

The superlattice film with the periodical thin film layers of Sb 2 Te 3 /GeTe used as a phase change memory was studied for deposition in the crystal phase. We successfully fabricated the superlattice structure with the sputtering temperature of 200 °C. Moreover, the pillar structure with the size of 70 nm was dry-etched using a HBr/Ar gas mixture.