Gallium arsenide: A new material to accomplish passively mode-locked Nd:YAG laser

Zhuhong Zhang, Liejia Qian, Dianyuan Fan, Ximing Deng

Applied Physics Letters · 1992 · 56 citations · 8 references

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Concepts

Abstract

A passively mode-locked Nd:YAG laser using a semi-insulating GaAs is accomplished. Ultrashort pulses, shorter than 10 ps, with an energy of 10 μJ per pulse are obtained. The dynamics of the pulse formation is described.

References

8