Applied Physics Letters · 1992 · 56 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsLaser Host MaterialsLaser OpticsLaser PhysicsSemiconductor LasersUltrafast OpticsWide-bandgap SemiconductorsGallium ArsenideMode LockingMode-locked LasersPulse PropagationPulsed LasersUltra-short Pulse GenerationUltrafast Pulse GenerationUltrashort Pulse Generation
A passively mode-locked Nd:YAG laser using a semi-insulating GaAs is accomplished. Ultrashort pulses, shorter than 10 ps, with an energy of 10 μJ per pulse are obtained. The dynamics of the pulse formation is described.
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Thomas F. Boggess, Arthur L. Smirl, Steven C. Moss et al. · IEEE Journal of Quantum Electronics · 1985 · 150 citations