Applied Physics Letters · 1984 · 70 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDiffusion In SolidsDiffusion ProcessesIon ImplantationSilicon MaterialsActivation EnergyActivation Free EnergyAnomalous DiffusionAnomalous Diffusion EffectsAtomic DiffusionDiffusion Activation EnergyDiffusion During AnnealingTransient Enhanced Diffusion
An anomalous enhanced diffusion is observed when As-implanted Si samples are exposed to rapid heating (∼ seconds) from room temperature to temperatures exceeding 1000 °C. This diffusion can be characterized by a low activation energy of ∼1.8 eV and is active during a very short time (≲ 1 s) probably during the rapid heating up of the sample.
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Laser and Electron Beam Interactions with Solids
N. Bloembergen, B. R. Appleton, G. K. Celler · MRS Bulletin · 1982 · 588 citations · Full text
T. O. Sedgwick · Journal of The Electrochemical Society · 1983 · 147 citations