Preparation of CuInS2 thin films by single-source MOCVD process using Bu2In(SPr)Cu(S2CNPri 2)

Ry�ki Nomura, Yasuharu Sekl, Haruo Matsuda

Journal of Materials Chemistry · 1992 · 48 citations · 9 references

Concepts

Abstract

Chalcopyrite CuInS2, thin layers were successfully prepared by a single-source metal-organic chemical vapour deposition (MOCVD) process using Bu2In(SPri)Cu(S2CNPri2) as a new source material at 400 °C of Tsub under reduced pressure of ca. 0.8 Torr.

References

9