Semiconductor Science and Technology · 2003 · 15 citations · 19 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSolar Cell MaterialsSolar CellsAmorphous SiliconP-n Junction Solar CellsPlasma DepositionPlasma-enhanced Chemical Vapor DepositionPlasma-enhanced DepositionSilicon Solar CellsSolar Cell Device PhysicsThin-film Semiconductors
We propose a novel solar cell structure based on the concept of forming p or n window layers by the field effect instead of impurity doping, and we verify its performance experimentally. The device, a field-effect amorphous silicon solar cell (FESC), was designed with the aid of a device simulator and fabricated by a plasma chemical vapour deposition system. We have verified that the output current of the FESC was amplified by the field-effect bias application to the gate electrode. The fundamental properties of this new type of amorphous silicon solar cell are demonstrated for the first time.
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Temperature-independent transport in high-mobility pentacene transistors
Shelby F. Nelson, Y.-Y. Lin, David J. Gundlach et al. · Applied Physics Letters · 1998 · 779 citations