Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements

Abstract

Carrier recombination centers related with iron complexes in p-type silicon are studied by microwave and light-induced absorption techniques. Both thermal- and photoactivation are used to decompose iron–boron pairs and to study the impact on the recombination lifetime. Due to photodissociation of iron–boron pairs the lifetime increases for high level injection. Efficient recombination occurs via an acceptor level at Ec−0.29 eV as derived from the temperature dependence of carrier lifetime.