Iodine ion milling of indium-containing compound semiconductors

Abstract

The effects of reactive I+ ion beams, derived from a source of solid elemental I, on In-containing compound semiconductors have been investigated using transmission electron microscopy. The results are compared with the effects produced by beams of Ar+ and Xe+ inert gas ions. It is shown that the surface accumulation of metallic In due to the disproportionation normally associated with ion milling of these materials can be eliminated by the use of I+ ion beams. Transmission electron microscope specimens in cross-sectional configuration are used to demonstrate the excellent results which may be obtained by I+ ion milling of InP and InSb.