Amorphous-silicon integrated circuit

Abstract

a-Si thin film FET's with low-temperature low-pressure chemical vapor deposition (CVD) SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> as the gate insulator were fabricated and they showed on-off current ratios of about 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> . An inverter was made with these a-Si FET's on a glass substrate for the first time.