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Dynamical theory of X‐ray diffraction by multilayered structures with microdefects
16
Citations
9
References
2007
Year
EngineeringElectron DiffractionSemiconductor NanostructuresSemiconductorsOptical PropertiesQuantum MaterialsMultilayered StructureCoherent WavesCompound SemiconductorMaterials SciencePhysicsCrystalline DefectsDiffractionDefect FormationCrystallographyMicrostructureX‐ray DiffractionApplied PhysicsCondensed Matter PhysicsX-ray DiffractionLayer Thicknesses
Abstract The dynamical recurrence relation for amplitudes of coherent waves in the multilayered structure with Coulomb‐type defects (2D and 3D defects or microdefects) has been derived and the expression for the diffuse component of reflection coefficient of this structure has been obtained with account for the dynamical redistribution of intensities of transmitted and diffracted coherent waves in each layer. The derived formulas, which self‐consistently take into account both the diffuse scattering contribution to the diffracted intensity and its extinction due to diffuse scattering, have been applied to analyze the rocking curve of InGaAs/GaAs multilayered structure with quantum well. Layer thicknesses and chemical compositions as well as strains and concentration profiles of chemical elements in layers have been found. Additionally, characteristics of dislocation loops in the substrate of the multilayered structure have been determined. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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