Room-temperature measurements of strong electroabsorption effect in Ge<i>x</i>Si1−<i>x</i>/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition

Abstract

We have used photocurrent measurements to demonstrate a strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition. Large voltage-induced shifts in absorption are observed at room temperature in the wavelength range from 1.2 to 1.58 μm. We anticipate that the results can be extended to fabricate GexSi1−x optoelectronic devices operating at room temperature.