High-purity In0.53Ga0.47As layer grown by liquid phase epitaxy - Concepedia

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High-purity In0.53Ga0.47As layer grown by liquid phase epitaxy

17

Citations

8

References

1988

Year

K. Ohtsuka, T. Ohishi, Yuji Abe, Hiroshi Sugimoto, T. Matsui, Hitoshi Ogata

Journal of Crystal Growth

Materials ScienceHigh-purity In0.53ga0.47as LayerEngineeringCrystal Growth TechnologyApplied PhysicsMolecular Beam EpitaxyEpitaxial Growth

References

	Year	Citations

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