2006 · 23 citations · 5 references
EngineeringElectrical EngineeringAntennasMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AntennasMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsSlot AntennasBicmos TechnologyIntegrated AntennasIntegrated Passive DevicesMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsSige Bicmos DesignSilicon Microwave Integrated CircuitsSilicon-on-insulator Technology
Today, SiGe HBT cut-off frequencies are higher than 230 GHz (P. Chevalier, et al., 2004) and this increase allows new millimeter wave (MMW) applications on silicon such as 60 GHz WLAN and 77 GHz automotive radar. One of the success keys is then the passive integration. This study focuses on a 52 GHz silicon integrated antenna and related feeding transmission line (TL) topics. Double slot antenna integrated in a standard BiCMOS process and 40 GHz coplanar patch antenna (2.3 dB gain @ 40 GHz) with a coplanar waveguide (CPW) feed line are depicted and characterized. Integrated TL achieved on standard STMicroelectronics (ST) BiCMOS, CMOS and silicon on insulator (SOI) technologies are described, performances are given (<0.7 dB/mm losses @ 80 GHz for SOI CPW). A full modeling has been developed up to 80 GHz with new approach for CPW on silicon technology due to passivation layer
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230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology
P. Chevalier, C. Fellous, Laurent Rubaldo et al. · 2004 · 35 citations