Initial Growth Mechanism of GaAs on Si(110)

Abstract

We report the initial growth mechanism of GaAs on Si(110) by molecular beam epitaxy. From in-situ reflection high-energy electron diffraction (RHEED) measurements we infer an initial two-dimensional growth mode. Streak RHEED patterns were observed up to about 20 Åthickness of GaAs epitaxial growth. With further deposition, extra spots appeared due to twins. We propose a model in which the twins are formed from antiphase domain boundaries.