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Synthesis of large-scale GaN nanobelts by chemical vapor deposition
33
Citations
17
References
2006
Year
Materials ScienceEngineeringNanomaterialsNanotechnologyNanomanufacturingApplied PhysicsX-ray DiffractionGan Power DeviceGallium OxideNanostructuringCategoryiii-v SemiconductorMetallic GalliumChemical Vapor DepositionGan Nanobelts
GaN nanobelts were synthesized in mass by direct reaction of metallic gallium with flowing ammonia using nickel as a catalyst. X-ray diffraction, field emission scanning electron microscope equipped with an energy dispersive spectroscopy, and high resolution transmission electron microscopy were used to characterize the products. The results showed that the products are of hexagonal wurtzite structure. The widths of nanobelts were in the range of 50–200nm with the thickness ranging from 3to10nm and their lengths up to several tens of microns. The catalytic growth mechanism of the GaN nanobelts was also discussed.
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