Publication | Closed Access
MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35
28
Citations
16
References
2006
Year
Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringMocvd GrowthApplied PhysicsAl Fraction 0.35Aluminum Gallium NitrideGallium OxideP-type Algan
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