Hydrothermal BaTiO3 films on silicon: Morphological and chemical characterization

Abstract

Insulating barium titanate films were successfully grown on Ti-deposited silicon substrates using the hydrothermal method. The film thickness was 35 and 49 nm for films treated at 200 and 250 °C, respectively, in a 0.25 M Ba(OH)2 solution for 8 h. The BaTiO3 films did not reach the Ti/Si interface. X-ray photoelectron spectroscopy revealed OH-free and nearly carbon-free films, which was corroborated using Auger electron spectroscopy (AES) depth analysis. AES revealed that the oxygen and barium concentrations are correlated throughout the film, and the existence of a diffuse BaTiO3/Ti interface. A discussion on the film growth mechanism is made using existing information on the subject.