Publication | Closed Access
Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride
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Citations
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References
1994
Year
Semiconductor TechnologyElectrical EngineeringWafer Scale ProcessingEngineeringLow-temperature PecvdApplied PhysicsSemiconductor Device FabricationSemiconductor Device
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