C. Leguijt

Low temperature surface passivation for silicon solar cells

C. Leguijt, P. Lölgen, John W. Eikelboom et al. · Solar Energy Materials and Solar Cells · 1996 · 139 citations

Electrical Engineering, Engineering, Applied Physics +4

Aluminium back-surface field doping profiles with surface recombination velocities below 200 cm/s

P. Lölgen, C. Leguijt, John W. Eikelboom et al. · 2002 · 46 citations

Aluminium Nitride, Engineering, Aluminium Back-surface Field +17

Boron doping of silicon using coalloying with aluminium

P. Lölgen, W.C. Sinke, C. Leguijt et al. · Applied Physics Letters · 1994 · 37 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generation

Axel Schönecker, John W. Eikelboom, A.R. Burgers et al. · Journal of Applied Physics · 1996 · 35 citations

Electrical Engineering, Wafer Scale Processing, Engineering +14

Microwave detection of minority carriers in solar cell silicon wafers

John W. Eikelboom, C. Leguijt, C.F.A. Frumau et al. · Solar Energy Materials and Solar Cells · 1995 · 23 citations

Electrical Engineering, Engineering, Applied Physics +5