C. Leguijt - Concepedia

Author

C. Leguijt

Energy Research Centre of the Netherlands

Also Known As

C. Leguijt

Publications

330

Citations

H-Index

Concepts

All Affiliations

Energy Research Centre of the Netherlands Institute for Atomic and Molecular Physics Delft University of Technology

About

C. Leguijt is an author at Energy Research Centre of the Netherlands specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	311
2	Applied Physics	7	7	311
3	Electrical Engineering	7	7	311
4	Materials Engineering	2	2	83
5	Chemical Engineering	1	1	11

C. Leguijt

Publications

311

Citations

H-Index

Page 1

	Year	Citations
Low temperature surface passivation for silicon solar cells C. Leguijt, P. Lölgen, John W. Eikelboom, Solar Energy Materials and Solar Cells Electrical EngineeringEngineeringApplied PhysicsSilicon Solar CellsSilicon On Insulator	1996	139
Aluminium back-surface field doping profiles with surface recombination velocities below 200 cm/s P. Lölgen, C. Leguijt, John W. Eikelboom, Aluminium NitrideEngineeringAluminium Back-surface FieldPhotovoltaicsSurface Recombination Velocities	2002	46
Boron doping of silicon using coalloying with aluminium P. Lölgen, W.C. Sinke, C. Leguijt, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsSolid Solubility	1994	37
Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generation Axel Schönecker, John W. Eikelboom, A.R. Burgers, Journal of Applied Physics Electrical EngineeringWafer Scale ProcessingEngineeringSilicon DebuggingApplied Physics	1996	35
Microwave detection of minority carriers in solar cell silicon wafers John W. Eikelboom, C. Leguijt, C.F.A. Frumau, Solar Energy Materials and Solar Cells Electrical EngineeringEngineeringApplied PhysicsMicrowave DetectionMicrowave Measurement	1995	23
Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride C. Leguijt, P. Lölgen, John W. Eikelboom, Solar Energy Materials and Solar Cells Semiconductor TechnologyElectrical EngineeringWafer Scale ProcessingEngineeringLow-temperature Pecvd	1994	20
Modeling of H− surface conversion sources; binary (H-Ba) and ternary (H-Cs/W) converter arrangements C. F. A. van Os, W. B. Kunkel, C. Leguijt, Journal of Applied Physics Electrical EngineeringChemical EngineeringEngineeringIon ImplantationEnergy Conversion	1991	11

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