Physical Review Letters · 2004 · 158 citations · 27 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMicroelectronicsSemiconductor DevicesAtomic Force MicroscopyCarbon NanotubesElectrical CharacterizationNanoelectronicsNanotubesScanning Probe MicroscopyAtomic Force Microscopy AnalysisAtomic Force Microscopy Surface AnalysisCarbon Nanotube ElectronicsCarbon Nanotube Field-effect TransistorsChannel Length ScalingElectrical Conductivity Of NanotubesInterfacial Transport PropertiesSchottky Barrier Contacts
We use an atomic force microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip as a movable current probe, we investigate the scaling of the device properties with channel length. Using the tip as a voltage probe, we study the properties of the contacts. We find that Au makes an excellent contact in the p region, with no Schottky barrier. In the n region, large contact resistances were found which dominate the transport properties.
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