1/f γ noise in polycrystalline silicon thin-film transistors

Abstract

Polycrystalline silicon thin-film transistors show a 1/fγ (with γ<1) low frequency noise behavior. The 1/fγ noise is explained by emission and trapping processes of carriers between trapping states located within an energy range of kT around the Fermi level and the exponential tail states. We have derived a simple relationship between the frequency index γ of the noise spectrum and the energy distribution parameter of the tail states. From the experimental noise data, the theoretical model allows us to determine the tail states energy distribution and the grain boundary trap density.