n-Type Organic Field-Effect Transistors with Very High Electron Mobility Based on Thiazole Oligomers with Trifluoromethylphenyl Groups

Shinji Ando, Ryo Murakami, Jun‐ichi Nishida, Hirokazu Tada, Youji Inoue, Shizuo Tokito, Yoshiro Yamashita

Journal of the American Chemical Society · 2005 · 332 citations · 12 references

Concepts

Abstract

Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5'-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate.

References

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