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Optical functions of silicon at elevated temperatures
195
Citations
12
References
1994
Year
PhotonicsRoom TemperatureOptical MaterialsEngineeringShort Wavelength OpticPhysicsOptical PropertiesOptical TestingApplied PhysicsThermal PhysicsOptoelectronic DevicesOptical FunctionsPhotonic Integrated CircuitOptical CharacterizationPhotonic DeviceOptoelectronicsTemperature TSilicon On Insulator
The optical functions of silicon have been measured accurately at elevated temperatures using the two-channel spectroscopic polarization modulation ellipsometer. The wavelength region covered is 240–840 nm (5.16–1.47 eV), and the temperature region covered is room temperature to 490 °C. Using this data, the refractive index n and the extinction coefficient k are both parameterized as functions of temperature T and photon energy E for photon energies below the direct band edge of silicon (∼3.36 eV or 370 nm). In this range, n(E,T) can be fit with five parameters, and k(E,T) can be fit with six parameters.
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