Catalytic Precracking of Amino-As in Metalorganic Molecular-Beam Epitaxy of GaAs

Abstract

Precracking of an As source employing the catalytic effect of GaAs is proposed for the growth of GaAs in metalorganic molecular-beam epitaxy. The As source used was an amino-As, tris-dimethylamino-arsenic {TDMAAs, As[N(CH 3 ) 2 ] 3 }. The enhancement of the growth rate was observed for an optimum combination of the substrate temperature and the cracking temperature. The mechanism of the growth enhancement was studied by means of quadrupole mass spectrometry. It is shown that the intermediate As species of the amino-As play a prominent role in growth enhancement.