Nonstoichiometry in Undoped BaTiO ₃

Abstract

Equilibrium electrical conductivity data for large‐grained, poly crystalline, undoped BaTiO 3 , as a function of temperature, 750° to 1000°C, and oxygen partial pressure, 10 −20 < P O2 <10 −1 MPa, were quantitatively fit to a defect model involving only doubly ionized oxygen vacancies, electrons, holes, and accidental acceptor impurities. The latter are invariably present in sufficient excess to control the defect concentrations through the compensating oxygen vacancies, except under the most severely reducing conditions. Singly ionized oxygen vacancies play no discernible role in the defect chemistry of BaTiO 3 within this experimental range. The derived accidental acceptor content has a slight temperature dependence which may reflect some small amount of defect association. Deviation of the conductivity minima from the ideal shape yields a small P O2 ‐independent conductivity contribution, which is tentatively identified as oxygen vacancy conduction.