The growth and radial analysis of Si/Ge core-shell nanowires

Abstract

Si/Ge core-shell nanowires, which possess uniform diameters around 100 nm, were synthesized at low temperature using a chemical vapor deposition process. The radial structures of Si/Ge nanowires were investigated via cross-sectional transmission electron microscopy analysis. The data from energy dispersive x-ray spectroscopy confirmed the coaxial structures of our nanowires, which consistently determined the core to be polycrystalline Si and the shell to be crystalline Ge. The optical properties of Si/Ge core-shell nanowires were also discussed from Raman measurement. The method presented in this study will allow efficient fabrication of core-shell nanostructures and may be promising for future device application.