Theoretical Analysis of Amorphous Silicon Alloy Based Triple Junction Solar Cells

Abstract

A theoretical analysis using analysis of microelectronic and photonic structures (AMPS-1D) has been performed to investigate for the first time the most preferred bandgap combination of amorphous silicon alloy based triple junction solar cells. We employed our new tunnel-recombination junction (TRJ) model to simulate the characteristics of a triple cell as a complete single device. We calculated two cases, hydrogenated microcrystalline silicon (µc-Si:H) as the bottom cell and as the middle cell. For both cases we found that a 2.0 eV top cell band gap is required to achieve efficiency of over 20%.