IEE Proceedings I Solid State and Electron Devices · 1986 · 16 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingHeat ConductionMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityMosfet ModelingPower MosfetsSelf-heating EffectsSelf-heating Modeling
Pulsed and continuous operational curves for MOS power transistors are compared. The latter show pronounced negative differential output conductance of the drain, which is explained in terms of a mathematical model. The potential hazards of this phenomenon are discussed.