Publication | Open Access
Progress on rare-earth doped ZnO-based varistor materials
58
Citations
35
References
2013
Year
Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringNanoelectronicsZno-based VaristorsOxide ElectronicsApplied PhysicsVoltage GradientResidual VoltageGallium OxideMicroelectronicsZno-based Varistor Materials
Rare-earth (RE) doping can greatly enhance the voltage gradient of ZnO-based varistors, and their nonlinear coefficient, leakage current, energy absorption capability, through-current capability and residual voltage can also be improved to certain extent. In this review, the progress on RE-doped ZnO-based varistor materials in recent years was summarized. The mechanism of RE doping on the electrical performance of ZnO varistors was analyzed. The issues in exploring new ZnO-based varistor materials by RE doping were indicated, and the development trends in this area were proposed.
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