an resolve the problems on poor processing performance and difficulty of fabrication of large-sized and complex-shaped components to a certain extent, which are originated from their high inherent brittleness and low impact toughness. Starting from the introduction to SiC-based materials, joining of ceramics, and joint strength characterization, the joining of SiC-based materials is reviewed by classifying the as-received interlayer materials, involving no interlayer, metallic, glass-ceramic, and organic interlayers. In particular, joining processes (involving joining techniques and parameter conditions), joint strength, interfacial microstructures, and/or reaction products are highlighted for understanding interfacial behavior and for supporting development of application-oriented joining techniques.25:T51b,Abstract Ce 2 [Zr 1− x (Mg 1/3 Sb 2/3 ) x ] 3 (MoO 4 ) 9 (0.02 ⩽ x ⩽ 0.10) ceramics were prepared by the traditional solid-state method. A single phase, belonging to the space group of $$R⩈erline 3 c$$ R 3 ¯ c , was detected by using X-ray diffraction at the sintering temperatures ranging from 700 to 850 °C. The microstructures of samples were examined by applying scanning electron microscopy (SEM). The crystal structure refinement of these samples was investigated in detail by performing the Rietveld refinement method. The intrinsic properties were calculated and explored via far-infrared reflectivity spectroscopy. The correlations between the chemical bond parameters and microwave dielectric properties were calculated and analyzed by Phillips-van Vechten-Levine (P-V-L) theory. Ce 2 [Zr 0.94 (Mg 1/3 Sb 2/3 ) 0.06 ] 3 (MoO 4 ) 9 ceramics with excellent dielectric properties were sintered at 725 °C for 6 h ( ε r = 10.37, Q × f = 71,748 GHz, and τ f = −13.6 ppm/°C, ε r is the dielectric constant, Q × f is the quality factor, and τ f is the temperature coefficient of resonant frequency).

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