Intrinsic recombination in dependence on doping concentration and excitation level application to lead chalcogenides

Abstract

Abstract On the base of anisotropic and parabolic band structure recombination rates are calculated for the mixed crystals Pb 0.78 Sn 0.22 Te and PbS 0.1 Se 0.9 in dependence on non‐equilibrium carrier concentration δ n up to 10 20 cm −3 in a wide range of temperatures and doping levels. Degeneracy causes different changes of lifetimes or recombination rates for material with different activation energies of the recombination process. Both, weakening or strengthening of the known n 2 p ‐law of the Auger transition rate can occur at beginning degeneracy. At δn > 10 19 cm −3 always sublinear behaviour should be observed. For radiative recombination a weakening of the np ‐law is obtained generally; in the limit δn > 10 19 cm −3 the rate behaves like ( δn ) 4/3 .