Journal of Applied Physics · 1978 · 63 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDopingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSilicon MaterialsCurrent GainDoping Effects On Device PerformanceGain EnhancementOxidationOxide Thickness MeasurementSilicon DopingSilicon InterfacesSilicon Oxidation
The Si oxidation rate at high temperatures is increased by heavy P doping. Sputter ion-Auger techniques have been used to investigate the oxide thickness and P concentration after 900 °C oxidation with an initial P surface concentration of between 2×1018 and 3.2×1020/cm3. Phosphorus was found to pile up in the Si-SiO2 interface region. The maximum P concentration near the interface was found to depend on doping and was (at certain P concentrations) an order of magnitude larger than that predicted by redistribution theory. A vacancy–P-complex model is presented to explain the observed behavior. A correlation between the selective pile-up of P at the interface and the current gain of planar bipolar transistors is reported.
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